Light-emitting device

ABSTRACT

A light-emitting device includes a substrate, a light-emitting component, a wavelength conversion component, an adhesive and a reflective layer. The light-emitting component is disposed on the substrate. The wavelength conversion component includes a high-density phosphor layer and a lower-density phosphor layer. The adhesive is formed between the light-emitting device and the high-density phosphor layer. The reflective layer is formed above the substrate and covers a lateral surface of the light-emitting component, a lateral surface of the adhesive and a lateral surface of the wavelength conversion component.

This application is a continuation application of U.S. application Ser.No. 15/268,681, filed Sep. 19, 2016, now U.S. Pat. No. 9,922,963, whichclaims the benefit of U.S. provisional application Ser. No. 62/220,249,filed Sep. 18, 2015, the benefit of U.S. provisional application Ser.No. 62/241,729, filed Oct. 14, 2015 and the benefit of Taiwanapplication serial No. 104144809, filed Dec. 31, 2015, the contents ofwhich are incorporated herein by references.

TECHNICAL FIELD

The disclosure relates in general to a light-emitting device, and moreparticularly to a light-emitting device having a reflective layer.

BACKGROUND

Conventional light-emitting device includes a phosphor glue and alight-emitting component, wherein the phosphor glue covers an uppersurface and a lateral surface of the light-emitting component. The hightemperature generated by the light-emitting component, whenilluminating, will negatively affect the phosphor glue, speed up thedeterioration of the phosphor glue and change the light color.

Therefore, it has become a prominent task for the industry to slow thedeterioration of the phosphor glue.

SUMMARY

Thus, the disclosure provides a light-emitting device capable ofrelieving the deterioration of the phosphor glue.

According to one embodiment, a light-emitting device is provided. Thelight-emitting device includes a substrate, a light-emitting component,a wavelength conversion layer, an adhesive layer and a reflective layer.The light-emitting component is disposed on and electrically connectedto the substrate and has a lateral surface and an upper surface. Thewavelength conversion layer is disposed on the light-emitting component.The adhesive layer is disposed between the light-emitting component andthe substrate and covers the upper surface of the light-emittingcomponent and at least a portion of the lateral surface of thelight-emitting component. The reflective layer is disposed above thesubstrate and at least surrounds the light-emitting component and theadhesive layer, wherein the reflective layer has an inclined reflectivesurface, the inclined reflective surface contacts a portion of thelight-emitting component and being away from the light-emittingcomponent in a direction of the substrate toward the wavelengthconversion layer.

According to another embodiment, a light-emitting device is provided.The light-emitting device includes a substrate, a light-emittingcomponent, a wavelength conversion layer and a reflective layer. Thelight-emitting component is disposed on and electrically connected tothe substrate and has an upper surface. The wavelength conversion layeris disposed on the light-emitting component and at least covers theupper surface of the light-emitting component. The reflective layer isdisposed above the substrate and surrounding the light-emittingcomponent and the wavelength conversion layer, wherein the reflectivelayer has an inclined reflective surface, the inclined reflectivesurface contacts a portion of the light-emitting component and a portionof the wavelength conversion layer, and the inclined reflective surfaceis away from the light-emitting component in a direction of thesubstrate toward the wavelength conversion layer.

According to another embodiment, a light-emitting device is provided.The light-emitting device includes a substrate, a light-emittingcomponent, a wavelength conversion layer, an adhesive layer and areflective layer. The light-emitting component is disposed on andelectrically connected to the substrate and has a lateral surface and anupper surface. The wavelength conversion layer is disposed on thelight-emitting component. The adhesive layer is disposed between thelight-emitting component and the substrate and covers the upper surfaceof the light-emitting component and at least a portion of the lateralsurface of the light-emitting component. The reflective layer isdisposed above the substrate and surrounds the light-emitting component,the adhesive layer and the wavelength conversion layer, wherein thereflective layer has an inclined reflective surface, the inclinedreflective surface contacts a portion of the light-emitting componentand a portion of the wavelength conversion layer, and the inclinedreflective surface is away from the light-emitting component in adirection of the substrate toward the wavelength conversion layer. Thelight-emitting device has a flat lateral surface including thereflective layer and the substrate.

The above and other aspects of the invention will become betterunderstood with regard to the following detailed description of thepreferred but non-limiting embodiment (s). The following description ismade with reference to the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates a cross-sectional view of a light-emitting deviceaccording to an embodiment of the invention;

FIG. 2 illustrates a cross sectional view of a light-emitting deviceaccording to another embodiment of the invention;

FIG. 3 illustrates a cross sectional view of a light-emitting deviceaccording to another embodiment of the invention;

FIG. 4 illustrates a cross sectional view of a light-emitting deviceaccording to another embodiment of the invention;

FIGS. 5A to 5H illustrate manufacturing processes of the light-emittingdevice of FIG. 1;

FIGS. 6A to 6C illustrate another manufacturing processes of thelight-emitting device of FIG. 1;

FIGS. 7A to 7C illustrate manufacturing processes of the light-emittingdevice of FIG. 2;

FIGS. 8A to 8C illustrate manufacturing processes of the light-emittingdevice of FIG. 3; and

FIGS. 9A to 9F illustrate manufacturing processes of the light-emittingdevice of FIG. 4.

DETAILED DESCRIPTION

FIG. 1 illustrates a cross-sectional view of a light-emitting device 100according to an embodiment of the invention. The light-emitting device100 includes a substrate 110, a light-emitting component 120, awavelength conversion layer 130, an adhesive layer 140 and a reflectivelayer 150.

The substrate 110 is, for example, a ceramic substrate. In the presentembodiment, the substrate 110 includes a base 111, a third electrode112, a fourth electrode 113, a first pad 114, a second pad 115, a firstconductive pillar 116 and a second conductive pillar 117.

The base 111 is made of a material such as silicon-based material. Thebase 111 has a first surface 111 u and a second surface 111 b oppositeto the first surface 111 u. The third electrode 112 and the fourthelectrode 113 are formed on the first surface 111 u of the base 111, andthe first pad 114 and the second pad 115 are formed on the secondsurface 111 b of the base 111. The first conductive pillar 116 and thesecond conductive pillar 117 pass through the base 111, wherein thefirst conductive pillar 116 connects the third electrode 112 to thefirst pad 114 for electrically connecting the third electrode 112 to thefirst pad 114, and the second conductive pillar 117 connects the fourthelectrode 113 to the second pad 115 for electrically connecting thefourth electrode 113 to the second pad 115.

The light-emitting device 100 may be disposed on a circuit board (notillustrated), wherein the first pad 114 and the second pad 115 of thesubstrate 110 are electrically connected to two electrodes (notillustrated) of the circuit board, such that the light-emittingcomponent 120 is electrically connected to the circuit board through thefirst pad 114 and the second pad 115.

The light-emitting component 120 is disposed on the substrate 110. Thelight-emitting component 120 includes a first electrode 121 and a secondelectrode 122, wherein the first electrode 121 and the second electrode122 are electrically connected to the third electrode 112 and the fourthelectrode 113 respectively.

The light-emitting component 120 is, for example, a light-emittingdiode. Although not illustrated, the light-emitting component 120 mayfurther comprise a first type semiconductor layer, a second typesemiconductor layer and a light emitting layer, wherein the lightemitting layer is formed between the first type semiconductor layer andthe second type semiconductor layer. The first type semiconductor layeris realized by such as an N-type semiconductor layer, and the secondtype semiconductor layer is realized by such as a P-type semiconductorlayer. Alternatively, the first type semiconductor layer is realized bysuch as a P-type semiconductor layer, and the second type semiconductorlayer is realized by such as an N-type semiconductor layer. The P-typesemiconductor is realized by a GaN-based semiconductor doped withtrivalent elements such as a gallium nitride based semiconductor layerwhich is doped with Beryllium (Be), zinc (Zn), manganese (Mn), chromium(Cr), magnesium (Mg), calcium (Ca), etc. The N-type semiconductor isrealized by a GaN-based semiconductor doped with doped with silicon(Si), germanium (Ge), tin (Sn), sulfur (S), oxygen (O), titanium (Ti)and or zirconium (Zr), etc. The light emitting layer 122 may be realizedby a structure of In_(x)Al_(y)Ga_(1-x-y)N (0≤x, 0≤y, x+y≤1) or astructure which is doped with Boron (B), phosphorus (P) or arsenic (As).In addition, the light emitting layer 122 may be a single-layeredstructure or multi-layered structure.

The first electrode 121 may be realized by a single-layered structure ora multi-layered structure which is made of at least one of materialsincluding gold, aluminum, silver, copper, rhodium (Rh), ruthenium (Ru),palladium (Pd), iridium (Ir), platinum (Pt), chromium, tin, nickel,titanium, tungsten (W), chromium alloys, titanium tungsten alloys,nickel alloys, copper silicon alloy, aluminum silicon copper alloy,aluminum silicon alloy, gold tin alloy, but is not limited thereto. Thesecond electrode 122 may be realized by a single-layered structure or amulti-layered structure. The second electrode 122 may be made of amaterial similar to that of the first electrode 121.

The wavelength conversion layer 130 includes a high-density phosphorlayer 131 and a low-density phosphor layer 132. The wavelengthconversion layer 130 includes a plurality of phosphor particles, whereina region whose phosphor particle density is higher is defined as thehigh-density phosphor layer 131, and a region whose phosphor particledensity is lower is defined as the low-density phosphor layer 132. In anembodiment, a ratio of a phosphor particle density of the high-densityphosphor layer 131 and a phosphor particle density of the low-densityphosphor layer 132 ranges between 1 and 10¹⁵, wherein the range maycontain or may not contain 1 and 10¹⁵.

In the present embodiment, the high-density phosphor layer 131 islocated between the light-emitting component 120 and the low-densityphosphor layer 132. That is, the light emitted from the light-emittingcomponent 120 first passes through the high-density phosphor layer 131,and then is emitted out of the wavelength conversion layer 130 throughthe low-density phosphor layer 132. Due the design of the high-densityphosphor layer 131, the light color of the light-emitting device 100 canbe collectively distributed in the chromaticity coordinate. As a result,the yield of the light-emitting device 100 may be increased. Thelow-density phosphor layer 132 may increase a light mixing probability.In detail, for the light L1 which has not contacted the phosphorparticles within the high-density phosphor layer 131 yet, thelow-density phosphor layer 132 increases the probability of the light L1contacting the phosphor particles. In the present embodiment, athickness T2 of the low-density phosphor layer 132 is larger than athickness T1 of the high-density phosphor layer 131, and accordingly thelight mixing probability of the light L1 of the light-emitting component120 can be further increased. In an embodiment, a ratio of the thicknessT2 and the thickness T1 ranges between 1 and 1000, wherein the range maycontain or may not contain 1 and 1000.

The wavelength conversion layer 130 covers the entire upper surface 120u of the light-emitting component 120. That is, in the presentembodiment, the area of the wavelength conversion layer 130 viewed fromthe top view is larger than the area of the light-emitting component 120viewed from the top view. In an embodiment, a ratio of the area of thewavelength conversion layer 130 viewed from the top view and the area ofthe light-emitting component 120 viewed from the top view ranges between1 and 1.35, however less than 1 or larger than 1.35 is also feasible.

In an embodiment, the wavelength conversion layer 130 may be made of amaterial including sulfide, Yttrium aluminum garnet (YAG), LuAG,silicate, nitride, oxynitride, fluoride, TAG, KSF, KTF, etc.

The adhesive layer 140 is, for example, a transparent adhesive. Theadhesive layer 140 includes a first lateral portion 141 and a heatresistance layer 142. The first lateral portion 141 covers a portion ofa lateral surface 120 s of the light-emitting component 120, and anotherportion or the other portion of the lateral surface 120 s of thelight-emitting component 120 is covered by the reflective layer 150.Viewed from the direction of the top view of FIG. 1, the first lateralportion 141 is shaped into a closed ring shape which surrounds theentire lateral surface 120 s of the light-emitting component 120. Inanother embodiment, the first lateral portion 141 may be shaped into anopen ring shape.

As illustrated in an enlargement view of FIG. 1, the heat resistancelayer 142 of the adhesive layer 140 is formed between the high-densityphosphor layer 131 and the light-emitting component 120, and accordinglyit can increase the heat resistance between the light-emitting component120 and the wavelength conversion layer 130 to slows the degrading speedof the wavelength conversion layer 130. In detail, if the heat generatedfrom the light-emitting component 120 is easily transmitted to thewavelength conversion layer 130, it will speed up the deterioration ofthe phosphor particles within the wavelength conversion layer 130. Inthe present embodiment, due to the forming of the heat resistance layer142, the heat transmitted to the wavelength conversion layer 130 can bedecreased, and accordingly it can slow the deterioration of the phosphorparticles within the wavelength conversion layer 130. In an embodiment,the thickness of the heat resistance layer 142 may range between 1 and1000, wherein the range may contain or may not contain 1 and 1000.

The reflective layer 150 is formed above the substrate 110 and coversthe lateral surface 120 s of the light-emitting component 120, a lateralsurface 141 s of the first lateral portion 141 of the adhesive layer 140and a lateral surface 130 s of the wavelength conversion layer 130, andaccordingly it can advantageously protect the light-emitting component120 and the wavelength conversion layer 130 from being exposed to bedamaged. The reflective layer 150 may reflect the light L1 emitted fromthe lateral surface 120 s of the light-emitting component 120 to thewavelength conversion layer 130, and accordingly it can increase theluminous efficiency of the light-emitting device 100.

As illustrated in FIG. 1, the reflective layer 150 further covers alateral surface of the first electrode 121, a lateral surface of thesecond electrode 122, a lateral surface of the third electrode 112 and alateral surface of the fourth electrode 113. As a result, it can preventthe first electrode 121, the second electrode 122, the third electrode112 and the fourth electrode 113 from being exposed and damaged by theenvironment, such as oxidation, humidity, etc.

There is a first gap G1 between the first electrode 121 and the secondelectrode 122, and there is a second gap G2 between the third electrode112 and the fourth electrode 113. The reflective layer 150 includes afilling portion 152, and the first gap G1 and/or the second gap G2 isled with the filling portion 152.

The reflective layer 150 includes a first reflective portion 151 whichsurrounds the lateral surface 120 s of the light-emitting component 120.The first reflective portion 151 has a first reflective surface 151 sfacing the lateral surface 120 s of the light-emitting component 120and/or the wavelength conversion layer 130 for reflecting the light L1emitted from the lateral surface 120 s of the light-emitting component120 to the wavelength conversion layer 130. In the present embodiment,the first reflective surface 151 s is a convex surface facing thelateral surface 120 s of the light-emitting component 120 and/or thewavelength conversion layer 130. In another embodiment, the firstreflective surface 151 s may be a concave surface.

As illustrated in FIG. 1, the convex first reflective surface 151 sconnects a lower surface 130 b of the wavelength conversion layer 130 tothe lateral surface 120 s of the light-emitting component 120. As aresult, it can increase the probability of the light L1 emitted from thelight-emitting component 120 contacting the convex surface, such thatthe light L1 emitted from the light-emitting component 120 almost orcompletely is reflected by the reflective layer 150 to the wavelengthconversion layer 130 and then is emitted out of the light-emittingdevice 100, and accordingly it can increase the luminous efficiency ofthe light-emitting device 100.

In an embodiment, the reflective layer 150 has a reflectivity largerthan 90%. The reflective layer 150 may be made of a material includingPoly phthalic amide (PPA), polyamide (PA), polyethylene terephthalate(PTT), polyethylene terephthalate (PET), polyethylene terephthalate1,4-cyclohexane dimethylene terephthalate (POT), epoxy compound (EMC),silicone compound (SMC) or other resin/ceramic material having highreflectivity. In addition, the reflective layer 150 may be a white glue.

As described above, in comparison with the conventional light-emittingdevice, the luminous area of the light-emitting device 100 can increaseby 40% and the brightness of the light-emitting device 100 can increaseby 15%.

FIG. 2 illustrates a cross sectional view of a light-emitting device 200according to another embodiment of the invention. The light-emittingdevice 200 includes the substrate 110, the light-emitting component 120,the wavelength conversion layer 130, the adhesive layer 140 and thereflective layer 150.

In comparison with the light-emitting device 100, the top-viewed area ofthe wavelength conversion layer 130 of the light-emitting device 200 issubstantially equal to the top-viewed area of the light-emittingcomponent 120 of the light-emitting device 200, that is, the ratio ofthe top-viewed area of the wavelength conversion layer 130 and thetop-viewed area of the light-emitting component 120 is about 1. Due thefirst lateral portion 141 of the adhesive layer 140 being removed, theentire lateral surface 120 s of the light-emitting component 120 and theentire lateral surface 142 s of the heat resistance layer 142 of theadhesive layer 140 are exposed, and accordingly the entire lateralsurface 120 s of the light-emitting component 120 and the entire lateralsurface 142 s of the heat resistance layer 142 of the adhesive layer 140can be covered by the reflective layer 150. Furthermore, since thelateral surface 120 s of the light-emitting component 120, the lateralsurface 130 s of the wavelength conversion layer 130 and the lateralsurface 142 s of the heat resistance layer 142 of the adhesive layer 140can be formed in the same singulation process, the lateral surface 120s, the lateral surface 130 s and the lateral surface 142 s aresubstantially aligned or flush with each other.

FIG. 3 illustrates a cross sectional view of a light-emitting device 300according to another embodiment of the invention. The light-emittingdevice 300 includes the substrate 110, the light-emitting component 120,the wavelength conversion layer 130, the adhesive layer 140 and thereflective layer 150.

In comparison with the light-emitting device 100, the reflective layer150 of the light-emitting device 300 further covers a lateral surface110 s of the substrate 110, and accordingly it can prevent or reduce thedamage by the exterior environmental factors (such as air, water, gas,etc.) through the lateral surface 110 s of the substrate 110.Furthermore, due to the reflective layer 150 covering the lateralsurface 110 s of the substrate 110, it can increase a length of a pathP1 from the exterior environmental to the electrode (the first electrode121 and/or the second electrode 122) of the light-emitting component 120(in comparison with the path P1 of FIG. 1, the length of the path P1 ofthe present embodiment is longer), and accordingly it can reduce theprobability of the light-emitting component 120 being damaged by theenvironmental factors for increasing the reliability and life of thelight-emitting device 300.

In another embodiment, the top-viewed area of the wavelength conversionlayer 130 of the light-emitting device 300 is substantially equal to thetop-viewed area of the light-emitting component 120. Such structure issimilar to the structure of the light-emitting device 200, and thesimilarities are not repeated.

FIG. 4 illustrates a cross sectional view of a light-emitting device 400according to another embodiment of the invention. The light-emittingdevice 400 includes the substrate 110, a plurality of the light-emittingcomponents 120, the wavelength conversion layer 130, the adhesive layer140 and the reflective layer 150. The light-emitting components 120 aredisposed on the substrate 110. The adhesive layer 140 covers at least aportion of the lateral surface 120 s of each light-emitting component120.

In comparison with the aforementioned light-emitting device, a portionof the adhesive layer 140 of the light-emitting device 400 is furtherformed between adjacent two light-emitting components 120. For example,the adhesive layer 140 further includes a second lateral portion 143located between two light-emitting components 120, and the secondlateral portion 143 has a lower surface 143 s, wherein the lower surface143 s is a convex surface or a concave surface. The reflective layer 150is formed between adjacent two light-emitting components 120. Forexample, the reflective layer 150 further includes a second reflectiveportion 153, wherein the second reflective portion 153 is locatedbetween adjacent two light-emitting components 120. The secondreflective portion 153 has a second reflective surface 153 s complyingwith the lower surface 143 s, and accordingly the second reflectivesurface 153 s is a concave surface. In another embodiment, the lowersurface 143 s may be a concave surface, and the second reflectivesurface 153 s is a convex surface. The second reflective surface 153 smay reflect the light L1 emitted by the light-emitting component 120 tothe wavelength conversion layer 130, and accordingly it can increase theluminous efficiency of the light-emitting device 400.

In another embodiment, the reflective layer 150 of the light-emittingdevice 400 may further cover the lateral surface 110 s of the substrate110 s. Such structure is similar to the structure of the light-emittingdevice 300, and the similarities are not repeated.

In another embodiment, the top-viewed area of the wavelength conversionlayer 130 of the light-emitting device 400 is substantially equal to thetop-viewed area of the light-emitting component 120. Such structure issimilar to the structure of the light-emitting device 200, and thesimilarities are not repeated.

FIGS. 5A to 5H illustrate manufacturing processes of the light-emittingdevice 100 of FIG. 1.

As illustrated in FIG. 5A, a wavelength conversion resin 130′ is formedon a carrier 10 by way of, for example, dispensing. The wavelengthconversion resin 130′ contains a plurality of the phosphor particles133. The polarity of the carrier 10 and the polarity of the wavelengthconversion resin 130′ are different, and accordingly the wavelengthconversion resin 130′ and the carrier 10 may be easily detached. Inaddition, although not illustrated, the carrier 10 may include adouble-sided adhesive layer and a carrier plate, wherein thedouble-sided adhesive layer is adhered to the carrier plate for carryingthe wavelength conversion resin 130′.

As illustrated in FIG. 5B, after the wavelength conversion resin 130′ isstood for a period such as 24 hours, most of the phosphor particles 133precipitate on a bottom of the wavelength conversion resin 130′ to formthe high-density phosphor layer 131, wherein the other of the phosphorparticles 133 are distributed within the other portion of the wavelengthconversion layer material 130′ to form the low-density phosphor layer132. The high-density phosphor layer 131 and the low-density phosphorlayer 132 form the wavelength conversion layer 130.

Then, the wavelength conversion layer 130 is cured. As a result, thepositions of the phosphor particles 133 can be fixed, and accordingly itcan prevent the density distribution of the phosphor particles 133within the wavelength conversion layer 130 from being easily changed.

Then, the carrier 10 and the wavelength conversion layer 130 areseparated to expose the high-density phosphor layer 131 of thewavelength conversion layer 130.

As illustrated in FIG. 5C, the substrate 110 and at least onelight-emitting component 120 are provided, wherein the light-emittingcomponent 120 is disposed on the substrate 110. In addition, thesubstrate 110 may be disposed on another carrier 10′, wherein thecarrier 10′ has a structure similar to that of the carrier 10, and thesimilarities are not repeated.

Then, the high-density phosphor layer 131 of the wavelength conversionlayer 130 is adhered to the light-emitting component 120 by the adhesivelayer 140. The following description will be made with reference to theaccompanying drawings.

As illustrated in FIG. 5D, the adhesive layer 140 is formed on the uppersurface 120 u of the light-emitting component 120 by way of, forexample, applying or dispensing.

As illustrated in FIG. 5E, the wavelength conversion layer 130 isdisposed on the adhesive layer 140, such that the adhesive layer 140adheres the light-emitting component 120 to the high-density phosphorlayer 131 of the wavelength conversion layer 130. Since the wavelengthconversion layer 130 extrudes the adhesive layer 140, the adhesive layer140 flow toward two sides of the light-emitting component 120 to formthe first lateral portion 141. Due to surface tension, the lateralsurface 141 s of the first lateral portion 141 forms a concave surface.Depending on the amount of the adhesive layer 140 and/or the property ofthe adhesive layer 140, the lateral surface 141 s may form a convexsurface. In addition, depending on the amount of the adhesive layer 140and/or the property of the adhesive layer 140, the first lateral portion141 may cover at least a portion of the lateral surface 120 s of thelight-emitting component 120.

As illustrated in an enlargement view of FIG. 5E, a portion of theadhesive layer 140 which remains on between the wavelength conversionlayer 130 and the light-emitting component 120 forms the heat resistancelayer 142. The heat resistance layer 142 may reduce the heat oftransmitting to the wavelength conversion layer 130 from thelight-emitting component 120, and accordingly it can slow the degradingspeed of the wavelength conversion layer 130.

As illustrated in FIG. 5F, at least one first singulation path W1passing through the wavelength conversion layer 130 is formed to cut offthe wavelength conversion layer 130. In the present embodiment, thefirst singulation path W1 does not pass through the first lateralportion 141 of the adhesive layer 140. In another embodiment, the firstsingulation path W1 may pass through a portion of the first lateralportion 141. The lateral surface 130 s of the wavelength conversionlayer 130 is formed by the first singulation path W1, wherein thelateral surface 130 s may be a plane or a curved surface.

The cutting width for forming the first singulation path W1 may besubstantially equal to the width of the first singulation path W1.Alternatively, after the first singulation path W1 is formed, thedouble-sided adhesive layer (not illustrated) disposed on the carrier10′ may be stretched to increase an interval between adjacent twolight-emitting components 120. Under such design, the first singulationpath W1 may be formed using a thin blade.

As illustrated in FIG. 5G, the fluid reflective layer 150 is formedabove the substrate 110 by way of, for example, compression molding,wherein the reflective layer 150 covers a portion of the lateral surface120 s of the light-emitting component 120, the lateral surface 130 s ofthe wavelength conversion layer 130, the lateral surface 141 s of thefirst lateral portion 141 of the adhesive layer 140, the lateral surfaceof the third electrode 112 of the substrate 110, the lateral surface ofthe fourth electrode 113 of the substrate 110, the lateral surface ofthe first electrode 121 of the light-emitting component 120 and thelateral surface of the second electrode 122 of the light-emittingcomponent 120.

In addition, the reflective layer 150 includes the first reflectiveportion 151 surrounding the entire lateral surface 120 s of thelight-emitting component 120. The first reflective portion 151 has thefirst reflective surface 151 s. Due to the lateral surface 141 s of theadhesive layer 140 being a concave surface, the first reflective surface151 s covering the lateral surface 141 s is a convex surface facing thewavelength conversion layer 130 and the light-emitting component 120.The convex first reflective surface 151 s can reflect the light L1emitted from the lateral surface 1205 to the wavelength conversion layer130, and accordingly it can increase the luminous efficiency of thelight-emitting device 100.

Since the first singulation path W1 of FIG. 5F does not pass through thefirst lateral portion 141 of the adhesive layer 140, the firstreflective surface 151 s of the reflective layer 150 can contact thelower surface 130 b of the wavelength conversion layer 130. As a result,the convex first reflective surface 151 s connects the lower surface 130b of the wavelength conversion layer 130 to the lateral surface 120 s ofthe light-emitting component 120, and accordingly it can increase thecontacting area of the light L1 emitted from the light-emittingcomponent 120 and the convex surface (the first reflective surface 151s).

Then, the reflective layer 150 is cured by way of heating.

As illustrated in FIG. 5H, at least one second singulation path W2passing through the reflective layer 150 and the substrate 110 is formedto form the light-emitting device 100 of FIG. 1. The first reflectivesurface 151 s of the reflective layer 150 and the lateral surface 110 sof the substrate 110 are formed by the second singulation path W2,wherein the first reflective surface 151 s and the lateral surface 110 sare substantially aligned or flush with each other.

In another embodiment, the second singulation path W2 may pass throughthe wavelength conversion layer 130, the reflective layer 150 and thesubstrate 110, such that the wavelength conversion layer 130, thereflective layer 150 and the substrate 110 form the lateral surface 130s, the lateral surface 150 s and lateral surface 110 s respectively,wherein the lateral surface 130 s, the lateral surface 150 s and lateralsurface 110 s are substantially aligned or flush with each other.

In addition, the cutting width for forming the second singulation pathW2 may be substantially equal to the width of the second singulationpath W2. Alternatively, after the second singulation path W2 is formed,the double-sided adhesive layer (not illustrated) disposed on thecarrier 10′ may be stretched to increase an interval between adjacenttwo light-emitting components 120. Under such design, the secondsingulation path W2 may be formed using a thin blade.

FIGS. 6A to 60 illustrate another manufacturing processes of thelight-emitting device 100 of FIG. 1.

As illustrated in FIG. 6A, the adhesive layer 140 is formed on thehigh-density phosphor layer 131 of the wavelength conversion layer 130by way of, for example, applying or dispensing.

As illustrated in FIG. 6B, the substrate 110 and the light-emittingcomponent 120 of FIG. 50 are disposed on the adhesive layer 140, whereinthe light-emitting component 120 contacts with the adhesive layer 140,such that the adhesive layer 140 adheres the light-emitting component120 to the high-density phosphor layer 131 of the wavelength conversionlayer 130.

Due to the light-emitting component 120 extruding the adhesive layer140, the adhesive layer 140 flows toward two sides of the light-emittingcomponent 120 to form the first lateral portion 141. Due to surfacetension, the lateral surface 141 s of the first lateral portion 141forms a concave surface. Depending on the amount of the adhesive layer140 and/or the property of the adhesive layer 140, the first lateralportion 141 may cover at least a portion of the lateral surface 120 s ofthe light-emitting component 120. In addition, as illustrated in anenlargement view of FIG. 6B, a portion of the adhesive layer 140 whichremains on between the wavelength conversion layer 130 and thelight-emitting component 120 forms the heat resistance layer 142. Theheat resistance layer 142 may reduce the heat of transmitting to thewavelength conversion layer 130 from the light-emitting component 120,and accordingly it can slow the degrading speed of the wavelengthconversion layer 130.

As illustrated in FIG. 60, the light-emitting components 120, thewavelength conversion layer 130 and the substrate 110 are inverted, suchthat the wavelength conversion layer 130 faces upwardly.

The following steps are similar the corresponding steps of FIGS. 5A to5H, and the similarities are not repeated.

FIGS. 7A to 7C illustrate manufacturing processes of the light-emittingdevice 200 of FIG. 2.

Firstly, the structure of FIG. 5E is formed by using the processes ofFIG. 5A to 5E, or the structure of FIG. 6C is formed by using theprocesses of FIG. 6A to 6C.

Then, as illustrated in FIG. 7A, at least one first singulation path W1passing through the wavelength conversion layer 130 and the firstlateral portion 141 which covers the lateral surface 120 s of thelight-emitting component 120 is formed, by way of cutting, to cut offthe wavelength conversion layer 130 and remove the first lateral portion141. Since the first singulation path W1 cuts off the first lateralportion 141, such that the entire lateral surface 120 s of thelight-emitting component 120 and the entire lateral surface 142 s of theheat resistance layer 142 are be formed and exposed.

As illustrated in FIG. 7B, the fluid reflective layer 150 is formedabove the substrate 110 by way of, for example, compression molding,wherein the reflective layer 150 covers the entire lateral surface 120 sof the light-emitting component 120, the entire lateral surface 142 s ofthe heat resistance layer 142, the entire lateral surface 130 s of thewavelength conversion layer 130, the lateral surface of the thirdelectrode 112 of the substrate 110, the lateral surface of the fourthelectrode 113 of the substrate 110, the lateral surface of the firstelectrode 121 of the light-emitting component 120 and the lateralsurface of the second electrode 122 of the light-emitting component 120.

Then, the reflective layer 150 is cured by way of heating.

As illustrated in FIG. 7C, at least one second singulation path W2passing through the reflective layer 150 and the substrate 110 isformed, by way of cutting, to form the light-emitting device 200 of FIG.2. The lateral surface 150 s of the reflective layer 150 and the lateralsurface 110 s of the substrate 110 are formed by the second singulationpath W2, wherein the lateral surface 150 s and the lateral surface 110 sare substantially aligned or flush with each other.

FIGS. 8A to 8C illustrate manufacturing processes of the light-emittingdevice 300 of FIG. 3.

Firstly, the structure of FIG. 5E is formed by using the processes ofFIG. 5A to 5E, or the structure of FIG. 60 is formed by using theprocesses of FIG. 6A to 60.

Then, as illustrated in FIG. 8A, at least one first singulation path W1passing through the wavelength conversion layer 130 and the substrate110 is formed, by way of cutting, to cut off the wavelength conversionlayer 130 and the substrate 110. The lateral surface 130 s of thewavelength conversion layer 130 and the lateral surface 110 s of thesubstrate 110 are formed by the first singulation path W1, wherein thelateral surface 130 s and the lateral surface 110 s are substantiallyaligned or flush with each other.

As illustrated in FIG. 8B, the fluid reflective layer 150 is formedabove the substrate 110 by way of, for example, dispensing, wherein thereflective layer 150 covers a portion of the lateral surface 120 s ofthe light-emitting component 120, the lateral surface 130 s of thewavelength conversion layer 130, the lateral surface 141 s of the firstlateral portion 141 of the adhesive layer 140, the lateral surface 110 sof the substrate 110, the lateral surface of the third electrode 112 ofthe substrate 110, the lateral surface of the fourth electrode 113 ofthe substrate 110, the lateral surface of the first electrode 121 of thelight-emitting component 120 and the lateral surface of the secondelectrode 122 of the light-emitting component 120.

Then, the reflective layer 150 is cured by way of heating.

As illustrated in FIG. 8C, at least one second singulation path W2passing through the reflective layer 150 is formed to form thelight-emitting device 300 of FIG. 3, wherein the lateral surface 150 sand the reflective layer 150 is formed by the second singulation pathW2.

In another embodiment, the second singulation path W2 may pass throughthe wavelength conversion layer 130, the reflective layer 150 and thesubstrate 110, such that the wavelength conversion layer 130, thereflective layer 150 and the substrate 110 form the lateral surface 130s, the lateral surface 150 s and lateral surface 110 s respectively,wherein the lateral surface 130 s, the lateral surface 150 s and lateralsurface 110 s are substantially aligned or flush with each other.

FIGS. 9A to 9F illustrate manufacturing processes of the light-emittingdevice 400 of FIG. 4.

As illustrated in FIG. 9A, the substrate 110 and a plurality of thelight-emitting components 120 are provided, wherein the light-emittingcomponents 120 are disposed on the substrate 110.

As illustrated in FIG. 9A, the substrate 110 and the light-emittingcomponents 120 are disposed on the carrier 10′.

As illustrated in FIG. 9B, the adhesive layer 140 is formed on the uppersurface 120 u of the light-emitting component 120 by way of, forexample, applying or dispensing.

As illustrated in FIG. 90, the wavelength conversion layer 130 isdisposed on the adhesive layer 140, such that the adhesive layer 140adheres each light-emitting component 120 to the high-density phosphorlayer 131 of the wavelength conversion layer 130. Since the wavelengthconversion layer 130 extrudes the adhesive layer 140, the adhesive layer140 flow toward two sides of the light-emitting component 120 to formthe first lateral portion 141. The first lateral portion 141 has thelateral surface 141 s. Due to surface tension, the lateral surface 141 sis a concave surface. However, depending on the amount of the adhesivelayer 140 and/or the property of the adhesive layer 140, the lateralsurface 141 s may form a convex surface facing substrate 110. Inaddition, depending on the amount of the adhesive layer 140 and/or theproperty of the adhesive layer 140, the first lateral portion 141 maycover at least a portion of the lateral surface 120 s of thelight-emitting component 120.

As illustrated in an enlargement view of FIG. 90, a portion of theadhesive layer 140 which remains on between the wavelength conversionlayer 130 and the light-emitting component 120 forms the heat resistancelayer 142. The heat resistance layer 142 can increase the heatresistance between the light-emitting component 120 and the wavelengthconversion layer 130, and accordingly it can slow the degrading speed ofthe wavelength conversion layer 130.

In addition, the adhesive layer 140 further includes the second lateralportion 143 which is formed between adjacent two light-emittingcomponents 120. The second lateral portion 143 has the lower surface 143s. Due to surface tension, the lower surface 143 s forms a concavesurface facing the substrate 110. However, depending on the amount ofthe adhesive layer 140 and/or the property of the adhesive layer 140,the lower surface 143 s may be a concave surface facing the substrate110.

As illustrated in FIG. 9D, at least one first singulation path W1passing through the wavelength conversion layer 130 is formed to cut offthe wavelength conversion layer 130. In the present embodiment, thefirst singulation path W1 does not pass through the first lateralportion 141 of the adhesive layer 140. In another embodiment, the firstsingulation path W1 may pass through a portion of the first lateralportion 141 or the entire first lateral portion 141.

As illustrated in FIG. 9E, the fluid reflective layer 150 is formedabove the substrate 110 by way of, for example, dispensing, wherein thereflective layer 150 covers a portion of the lateral surface 120 s ofthe light-emitting component 120, the lateral surface 130 s of thewavelength conversion layer 130, the lateral surface 141 s of the firstlateral portion 141 of the adhesive layer 140, the lower surface 143 sof the second lateral portion 143, the lateral surface of the thirdelectrode 112 of the substrate 110, the lateral surface of the fourthelectrode 113 of the substrate 110, the lateral surface of the firstelectrode 121 of the light-emitting component 120 and the lateralsurface of the second electrode 122 of the light-emitting component 120through the first singulation path W1.

In addition, the reflective layer 150 includes the first reflectiveportion 151 and the second reflective portion 153, wherein the firstreflective portion 151 covers the first lateral portion 141, and thesecond reflective portion 153 covers the second lateral portion 143. Thefirst reflective portion 151 has the first reflective surface 151 scomplying with the lateral surface 1415, and the first reflectivesurface 151 s is a convex surface due to the lateral surface 141 s beinga concave surface. The second reflective portion 153 has the secondreflective surface 153 s complying with the lower surface 143 s, and thesecond reflective surface 153 s is a concave surface due to the lateralsurface 141 s being a convex surface.

Then, the reflective layer 150 is cured by way of heating.

As illustrated in FIG. 9F, at least one second singulation path W2passing through the reflective layer 150 and the substrate 110 is formedto form the light-emitting device 400 of FIG. 4. The lateral surface 150s of the reflective layer 150 and the lateral surface 110 s of thesubstrate 110 are formed by the second singulation path W2, wherein thelateral surface 150 s and the lateral surface 110 s are substantiallyaligned or flush with each other.

In another embodiment, the second singulation path W2 may pass throughthe wavelength conversion layer 130, the reflective layer 150 and thesubstrate 110, such that the wavelength conversion layer 130, thereflective layer 150 and the substrate 110 form the lateral surface 130s, the lateral surface 150 s and lateral surface 110 s respectively,wherein the lateral surface 130 s, the lateral surface 150 s and lateralsurface 110 s are substantially aligned or flush with each other.

In other embodiment, the reflective layer 150 of the light-emittingdevice 400 may cover the lateral surface 120 s of at least onelight-emitting component 120, the lateral surface 142 s of the heatresistance layer 142 and the lateral surface 130 s of the wavelengthconversion layer 130 by using processes of FIGS. 7A to 7C.

In other embodiment, the reflective layer 150 of the light-emittingdevice 400 may cover the lateral surface 110 s of the substrate 110 byusing processes of FIGS. 8A to 8B.

It will be apparent to those skilled in the art that variousmodifications and variations can be made to the disclosed embodiments.It is intended that the specification and examples be considered asexemplary only, with a true scope of the disclosure being indicated bythe following claims and their equivalents.

What is claimed is:
 1. A light-emitting device, comprises: a substrate;a light-emitting component disposed on the substrate and electricallyconnected thereto; a wavelength conversion layer, disposed on thelight-emitting component and having a high-density phosphor layer and alow-density phosphor layer stacked vertically, wherein the high-densityphosphor layer has a substantially uniform thickness; an adhesive layerdisposed between the light-emitting component and the substrate andcovering an upper surface and a portion of a lateral surface of thelight-emitting component, wherein the high-density phosphor layer isspaced from the upper surface of the light-emitting component by theadhesive layer; and a reflective layer disposed above the substrate andat least surrounding the light-emitting component and the adhesivelayer, wherein the reflective layer has an inclined reflective surface,the inclined reflective surface contacts a portion of the light-emittingcomponent and is gradually away from the light-emitting component alonga direction from the substrate toward the wavelength conversion layer.2. The light-emitting device according to claim 1, wherein thehigh-density phosphor layer is disposed between the low-density phosphorlayer and the light-emitting component.
 3. The light-emitting deviceaccording to claim 1 wherein the inclined reflective surface is a convexsurface facing the wavelength conversion layer, the adhesive layer andthe light-emitting component.
 4. The light-emitting device according toclaim 1, wherein the reflective layer covers at least a portion of alateral surface of the wavelength conversion layer.
 5. Thelight-emitting device according to claim 1, wherein an area of a bottomsurface of the wavelength conversion layer is larger than an area of theupper surface of the light-emitting component.
 6. The light-emittingdevice according to claim 1, wherein the light-emitting device has aflat top surface comprising the reflective layer and the wavelengthconversion layer surrounded by the reflective layer.
 7. Thelight-emitting device according to claim 1, wherein the light-emittingdevice has a flat lateral surface comprising the reflective layer andthe substrate.
 8. A light-emitting device, comprises: a substrate; alight-emitting component disposed on the substrate and electricallyconnected thereto; a wavelength conversion layer disposed on thelight-emitting component and at least covering an upper surface of thelight-emitting component, wherein the wavelength conversion layer has asubstantially uniform thickness and is spaced from the upper surface ofthe light-emitting component by an adhesive layer adhering thewavelength conversion layer to the light-emitting component; and areflective layer disposed above the substrate and surrounding thelight-emitting component and the wavelength conversion layer, whereinthe reflective layer has a reflective surface, the reflective surfacecontacts at least a portion of the light-emitting component and aportion of the wavelength conversion layer.
 9. The light-emitting deviceaccording to claim 8, wherein the wavelength conversion layer comprisesa high-density phosphor layer and a low-density phosphor layer stackedvertically.
 10. The light-emitting device according to claim 9, whereinthe high-density phosphor layer is disposed between the low-densityphosphor layer and the light-emitting component.
 11. The light-emittingdevice according to claim 8, wherein the reflective layer covers atleast a portion of a lateral surface of the wavelength conversion layer.12. The light-emitting device according to claim 8, wherein an area of abottom surface of the wavelength conversion layer is equal to an area ofthe upper surface of the light-emitting component.
 13. Thelight-emitting device according to claim 8, wherein the light-emittingdevice has a flat lateral surface comprising the reflective layer andthe substrate.
 14. A light-emitting device, comprises: a substrate; alight-emitting component disposed on the substrate and electricallyconnected thereto; a wavelength conversion layer disposed on thelight-emitting component, wherein the wavelength conversion layer has asubstantially uniform thickness; an adhesive layer disposed between thelight-emitting component and the substrate and covering an upper surfaceand at least a portion of the lateral surface of the light-emittingcomponent, wherein the wavelength conversion layer is spaced from theupper surface of the light-emitting component by the adhesive layer; anda reflective layer disposed above the substrate and surrounding thelight-emitting component, the adhesive layer and the wavelengthconversion layer, wherein the reflective layer has an inclinedreflective surface, the inclined reflective surface contacts a portionof the light-emitting component and a portion of the wavelengthconversion layer, and the inclined reflective surface is gradually awayfrom the light-emitting component along a direction from the substratetoward the wavelength conversion layer; wherein the light-emittingdevice has a flat lateral surface comprising the reflective layer andthe substrate.
 15. The light-emitting device according to claim 14,wherein the wavelength conversion layer comprises a high-densityphosphor layer and a low-density phosphor layer stacked vertically. 16.The light-emitting device according to claim 15, wherein thehigh-density phosphor layer is disposed between the low-density phosphorlayer and the light-emitting component.
 17. The light-emitting deviceaccording to claim 14 wherein the inclined reflective surface is aconvex surface facing the wavelength conversion layer, the adhesivelayer and the light-emitting component.
 18. The light-emitting deviceaccording to claim 14, wherein the reflective layer covers at least aportion of a lateral surface of the wavelength conversion layer.